Response to "comment on real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM".

نویسندگان

  • Qi Liu
  • Sun Jun
  • Hangbing Lv
  • Shibing Long
  • Ling Li
  • Kuibo Yin
  • Neng Wan
  • Yingtao Li
  • Litao Sun
  • Ming Liu
چکیده

In our recently published paper, [ 1 ] we achieved direct visualization of the dynamic growth and dissolution of conductive fi laments (CFs) in Ag (or Cu)/ZrO 2 /Pt systems based on in situ transmission electron microscope (TEM) observations. Furthermore, continuous TEM images clearly showed that the CFs start to grow at the Cu/ZrO 2 (or Ag/ZrO 2 ) interface and begin to dissolve at the ZrO 2 /Pt interface, which is in contrast to the prediction from the electrochemical metallization (ECM) theory developed for the solid-electrolyte-based ReRAM (also referred to a the ECM cell). [ 2 , 3 ] The same direction of CF growth/dissolution had been demonstrated in other ECM cells, including Ag/ α -Si/Pt, [ 4 ] Cu/ZnO/Pt, [ 5 ] and Cu/P3HT:PCBM/ ITO devices. [ 6 ] In our paper, [ 1 ] we suggested that the differences in cation solubility and diffusion coeffi cient between traditional solid-electrolyte and oxide-electrolyte materials accounts for this discrepancy, and based on our suggestion, the metal ions would be reduced and crystallized inside the ZrO 2 -electrolyte system in order to explain the observed results. Valov and Waser made a comment to dispute our explanation based on the following arguments. (1) The EDX analysis presented in our paper cannot identify the chemical valence of Ag (Cu) species inside the CF region. They suggested that the resistive switching (RS) behavior in our device cannot rule out valence change memory (VCM) effects due to oxide materials like ZrO 2 , TiO 2 , HfO 2 , and Ta 2 O 5 which are often used for ECM and VCM cells. (2) The large amount of electrons in the solid materials is not a suffi cient condition to reduce the incoming metal ions inside the solid electrolyte materials. (3) Considering the electric potential distribution, the Cu or Ag CFs should not start to grow at the Cu/ZrO 2 (or Ag/ZrO 2 ) interface and begin to dissolve at the ZrO 2 /Pt interface. At the end of their comment, they presented a hypothesis in which the growth and dissolution of CF in ZrO 2 result from the metal ion doping/

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

ساخت و بررسی عمل کرد سنسور اکسیژن و بهبود آن با استفاده از نیمه هادی اکسید فلزات تیتانیوم و سزیم و قلع به عنوان مرجع‌های جامد

We report the development of different types of oxygen sensors based on yittria-stabilized zirconia (YSZ) as a solid electrolyte. The conventional oxygen sensor is a concentration cell with two porous Pt electrodes, one of which is exposed to air as a constant (reference) oxygen concentration and the other is exposed to automobile exhaust gas of variable oxygen concentration, depending on the a...

متن کامل

Linearity response characterization of Polystyrene/ Graphene oxide nanocomposite as real-time dosimeter for therapeutic purposes

Introduction: In recent years, one of the emerging two dimensional (2D) carbon based nano- materials namely Graphene Oxide has been incorporated into polymeric matrices to enhance the electrical properties of the composites. The electrical conductivity of Graphene Oxide is excellently used in fabricating polymer-based sensors, energy-related systems, biotechnology, anti-statics...

متن کامل

Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations.

Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO2 ReRAM, the relative standard deviations of...

متن کامل

Modeling the Resistive Switching Process in Transition Metal Oxide Based Non-Volatile Memory Devices

Binary transition metal oxides TiOx, NiOx, HfOx, AlOx, TaOx have been recently proposed as possible materials for embedded non-volatile memory modules. Currently, a major bottleneck in determining the scalability, retention and endurance of these devices, is the lack of detailed understanding of resistive switching mechanism. Generally, the process of forming in transition metal oxides systems ...

متن کامل

Dynamic Response Analysis of the Planar and Tubular Solid Oxide Fuel Cells to the Inlet Air Mass Flow Rate Variation

The purpose of present study is to investigate the dynamic response of two conventional types of solid oxide fuel cells to the inlet air mass flow rate variation. A dynamic compartmental model based on CFD principles is developed for two typical planar and tubular SOFC designs. The model accounts for transport processes (heat and mass transfer), diffusion processes, electrochemical processes, a...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Advanced materials

دوره 25 2  شماره 

صفحات  -

تاریخ انتشار 2013